3sk41 — Datasheet

A highly common surface-mount (SOT-143) alternative offering excellent transconductance and low noise for RF applications.

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| Parameter | Condition | Min | Typ | Max | Unit | | :--- | :--- | :--- | :--- | :--- | :--- | | | VDS=10V, VG1S=0, VG2S=0 | 5 | 15 | 25 | mA | | Gate-Source Cutoff Voltage | VDS=10V, ID=100µA | -0.5 | -1.5 | -3.0 | V | | Forward Transfer Admittance (|Yfs|) | VDS=10V, ID=10mA, f=1kHz | 12 | 20 | 30 | mS | | Input Capacitance (Ciss) | VDS=10V, f=1MHz | - | 3.5 | 5.0 | pF | | Reverse Transfer Capacitance (Crss) | VDS=10V, f=1MHz | - | 0.03 | 0.1 | pF | | Output Capacitance (Coss) | VDS=10V, f=1MHz | - | 2.0 | 3.0 | pF | | Noise Figure (NF) | f=200MHz, VG2S=4V | - | 3.0 | 5.0 | dB | | Power Gain (Gps) | f=200MHz, VG2S=4V | 18 | 22 | - | dB | 3sk41 datasheet

Always refer to the specific manufacturer datasheet for the exact pin arrangement, as some variants may differ slightly. 4. Key Applications of the 3SK41

). According to documentation from manufacturers like Jotrin Electronics and Littlediode : N-Channel Dual-Gate MOSFET Package: TO-72 (4-lead metal can) Drain-Source Voltage ( VDScap V sub cap D cap S end-sub ): Typically rated up to Gate-Source Voltage ( VG1Scap V sub cap G 1 cap S end-sub VG2Scap V sub cap G 2 cap S end-sub ): ± (dependent on manufacturer data) Maximum Drain Current ( IDcap I sub cap D ): Total Device Dissipation ( PDcap P sub cap D ): Forward Transfer Admittance ( ): (high transconductance) Noise Figure ( NFcap N cap F ): Low-noise performance for superior weak-signal reception 3. Pin Configuration (TO-72 Package) The 3SK41 typically uses a four-lead TO-72 package. Drain (D) Source (S) / Shield Gate 1 ( G1cap G sub 1 - Input) Gate 2 ( G2cap G sub 2 - AGC/Control) Note: The case is usually connected to the Source ( ) to provide shielding, reducing parasitic capacitance. 4. Key Features & Advantages If you share with third parties, their policies apply

The is an N-channel dual-gate MOSFET primarily designed for high-frequency applications, specifically for VHF/UHF RF amplification and mixing in television tuners and radio receivers.

The isn't just a part number; in the world of vintage amateur radio, it’s often remembered as the "silent hero" that cleaned up the airwaves. The Legend of the 3SK41 the device is optimized for low-power

While the metal CAN-4 package provides robust protection against thermal stress, the 3SK41 is exceptionally sensitive to . Because it uses ultra-thin insulated metal-oxide gates, a tiny static spark can permanently rupture the internal barriers.

It is highly effective in frequency mixer circuits, where local oscillator and RF signals are applied to separate gates to produce an intermediate frequency (IF). Low Feedback Capacitance:

Based on typical datasheet parameters for the 3SK41, the device is optimized for low-power, high-gain performance: Typical Value / Description N-Channel Dual-Gate MOSFET TO-72 (Metal Can) Max Power Dissipation ( cap P sub cap D Drain Current ( cap I sub cap D Forward Transconductance ( g sub f s end-sub 8.0 mS (min) Input Capacitance ( cap C sub i s s end-sub 5.0 pF (max) Operating Temperature